C1ee01406d 4086..4095
نویسندگان
چکیده
Heavily doped compounds Mo3Sb7 xTex (x 1⁄4 0, 1.0, 1.4, 1.8) were synthesized by solid state reaction and sintered by spark plasma sintering. Both X-ray diffraction and electron probe microanalysis indicated the maximum solubility of Te was around x 1⁄4 1.8. The trends in the electrical transport properties can generally be understood using a single parabolic band model, which predicts that the extremely high carrier concentration of Mo3Sb7 ( 10 cm ) can be reduced to a nearly optimized level ( 2 10 cm ) for thermoelectric figure of merit (zT) by Te-substitution with x 1⁄4 1.8. The increased lattice thermal conductivity by Te-doping was found to be due to the decreased Umklapp and electron– phonon scattering, according to a Debye model fitting. The thermoelectric figure of merit (zT) monotonously increased with increasing temperature and reached its highest value of about 0.51 at 850 K for the sample with x 1⁄4 1.8, making these materials competitive with the state-of-the-art thermoelectric SiGe alloys. Evidence of significant electron–phonon scattering is found in the thermal conductivity.
منابع مشابه
Design Techniques for Radiation-Hard Phase-Locked Loop Components in a 0.25μm SOS CMOS Process
Wickham Chen, Southern Methodist University, Dallas, TX, 75275. Phone: 214-768-1402. Fax: 214-768-3573. Email: [email protected] Tiankuan Liu, Southern Methodist University, Dallas, TX, 75275. Phone: 214-768-1541. Fax: 214-768-4095. Email: [email protected] Junheng Zhang, Southern Methodist University, Dallas, TX, 75275. Phone: 214-768-1402. Fax: 214-768-3573. Email: [email protected]...
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